NV7643-55 is a multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G / 4G handsets and operates efficiently in WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI®). The PAM consists of a WCDMA / LTE block for low, high, and mid-bands, and a Multi- Function Control (MFC) block, RF input/output ports internally matched to 50 Ω to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time. The InGaP die and the silicon die and passive components are mounted on a multi-layer laminate substrate. The assembly is encapsulated in a 4.0 mm x 6.8 mm x 0.80 mm, 42- pad LGA package which allows for a highly manufacturable, low cost solution. 

             3G: The NV7643-55 supports WCDMA, High-Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), High Speed Packet Access (HSPA+), and TD-SCDMA modulations. Varying the input power level provides output power control. VCC is adjusted using a DCDC converter to maximize efficiency for each power level and modulation type. 

             4G: The NV7643-55 supports 1.4, 3, 5, 10, 15, 20 MHz channel bandwidths. Similar to 3G operation, output power is controlled by varying the input power and VCC is adjusted using a DCDC converter to maximize efficiency for each power level. 3G / 4G Modulation scheme includes: - WCDMA Voice Release 99 - HSDPA categories - HSUPA - HSPA+ - TD-SCDMA - LTE 1.4, 3, 5, 10, 15, 20 MHz Channel BW - TDD-LTE