l FDD LTE Bands1,2,3,4,5,7,8,9,12,13, 17,19,20,25,26,28, 30,66,71
l TDD LTE Bands34,38,39,40,41
l C2K BandsBC0,1,4, 6,10,15
l Two T/R (RX) portsand 14 outputs
l Industry-leading PAEfor 3G/4G
l Optimized for APTDCDC operation
l ully programmableMobile Industry Processor Interface (MIPI) control
l MIPI programmablebias modes optimize best efficiency / linearity trade-off for
3G and 4G;minimizes DG09 for 3G.
l Small, low profile
package:
- 4.0 x 6.8 x 0.8 mm Max.
- 42-padconfiguration
Description
NV7643-31 is a multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G / 4G handsets and operates efficiently in WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI®).
The PAM consists of a WCDMA / LTE block for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 Ω to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time.