NM120040T4

南通至晟微电子技术有限公司
Novaco Microelectronics Technologies Ltd.

南通至晟微电子技术有限公司

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NM120040T4

N-channel 1200V SiC Power MOSFET in TO247-4 Package

市场价：￥ 0.00

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N-channel 1200V SiC Power MOSFET in TO247-4 Package

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上一个： NV7644

下一个： NM120040T3

NV7644-31

NV7644 (Cat.1/Cat.4)

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Multiband 3G/LTE handsets WCDMA BandsI,II,III,IV,V,VIII,IX TDSCDMA Bands34,39 FDDLTEBands1,2,3,4,5,7,8,9,12,13,17,20,28,30 TDDLTEBands38,39,40,41
NV7643

MMMB

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    Applications  &  Feature l  Multiband 3G/LTEhandsetsl  WCDMA Bands I, II, III, IV, V, VIII, IXl  TD-SCDMA Bands 34,39l  FDD LTE Bands 1,2,3,4,5,7,8,9,12,13, 17,19,20,25,26,28, 30,66,71l  TDD LTE Bands 34,38,39,40,41l  C2K Bands BC0,1,4, 6,10,15l  Two T/R (RX) ports and 14 outputsl  Industry-leading PAE for 3G/4Gl  Optimized for APT DCDC operationl  ully programmable Mobile Industry Processor Interface (MIPI) controll  MIPI programmable bias modes optimize best efficiency / linearity trade-off for3G and 4G; minimizes DG09 for 3G.l  Small, low profilepackage:- 4.0 x 6.8 x 0.8 mm Max.- 42-pad configuration
NV7916

TXM

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    Applications  &  Featuresl  Cellular handsets encompassing Quad-Band GSM/EDGE, Dual-Band TD-SCDMA,and TDD LTE- Class 4 GSM850/900- Class 1 DCS1800/PCS1900- Class 12 GPRS multi-slot operation- Linear EDGE operation- TD-SCDMA Bands 34/39- TDD LTE Band 34/39l  LGA: 5.5 mm x 5.3 mm x 0.85 mm Max l  Fully programmable MIPI RFFE control l  Fourteen low-insertion-loss TRx ports (five ultra-low loss) with enhanced linearity, for state-of-the-art 4G performance and GPS / WiFi compatibilityl  Integrated ISM Band Notch Filterl  8KV ESD Protection at Antenna Portl  Integrated broadband directional couplerl  High Efficiency (inclusive of coupler)l  Current limiting and over-voltage protection for ruggedness and extended battery lifel  Power control circuitry built-in for improved TRP variation
NV7643-55

MMMB

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Applications Multiband 3G/LTE handsets WCDMA Bands I, II, III, IV, V, VIII, IX TD-SCDMA Bands 34,39 FDD LTE Bands 1, 2, 3, 4, 5, 7, 8, 9, 12, 13, 17, 20, 28, 30 TDD LTE Band 38, 39, 40, 41 Features Two T/R (RX) ports and 9 outputs Industry-leading PAE for 3G/4G Optimized for APT DCDC operation Fully programmable Mobile Industry Processor Interface (MIPI) control MIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4G; minimizes DG09 for 3G. Small, low profile LGA package: - 4.0 x 6.8 x 0.80 mm - 42-pad configuration
NV7645

MMMB

市场价:￥0.00

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Applications Multiband 3G/LTE handsets WCDMA Bands I, II, III, IV, V, VIII, IX TD-SCDMA Bands 34,39 FDD LTE Bands 1, 2, 3, 4, 5, 7, 8, 9, 12, 13, 17, 20, 28, 30 TDD LTE Bands 34,38, 39, 40, 41 Features One T/R (RX) ports and 6 outputs Industry-leading PAE for 3G/4G Optimized for APT DCDC operation Fully programmable Mobile Industry Processor Interface (MIPI) control MIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4G; minimizes DG09 for 3G. Small, low profile LGA package: - 3.0 x 3.0 x 0.83 mm - 22-pad configuration
NV7644

NV7644 (Cat.1/Cat.4)

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    Applications  &  Feature l Multiband 3G/LTE handsetsl  WCDMA Bands I, II, III, IV, V, VIII, IXl  TD-SCDMA Bands 34,39l  FDD LTE Bands 1,2,3,4,5,7,8,9,12,13, 17,19,20,25,26,28, 30,66,71l  TDD LTE Bands 34,38,39,40,41l  C2K Bands BC0,1,4, 6,10,15l  Industry-leading PAE for 3G/4Gl  Optimized for APT DCDC operationl  ully programmable Mobile Industry Processor Interface (MIPI) controll  MIPI programmable bias modes optimize best efficiency / linearity trade-off for3G and 4G; minimizes DG09 for 3G.l  Small, low profile LGA package:           - 4.0 x 4.0 x 0.81 mm.           - 29-pad configuration        - 3G and 4G; minimizes DG09 for 3G.
NM120040T4

Power Electricity

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N-channel 1200V SiC Power MOSFET in TO247-4 Package
NM120040T3

Power Electricity

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N-channel 1200V SiC Power MOSFET in TO247-3 Package

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